FZL 4146
Absolute Maximum Ratings
(cont’d)
Parameter
Symbol
Limit Values
min.
Current in SQ
Current in W
Current in W
Junction temperature
Storage temperature
Therm. resistance,
system-ambient
Therm. resistance,
system-packag.
ESD strength acc. to MIL -
hrs. 883 Meth. 3015
(100 pF/1.5 kΩ,
5 discharges/polarity)
Burst strength of the inputs/
outputs Q and W connected to
the power transistors (in acc.
with IEC publ. 801-4)
Junction temperature in normal
operation during 15 years with
100 % ED
Notes:
5)
Unit
Remarks
max.
8
5
10
150
150
95
25
mA
mA
mA
°C
°C
K/W
K/W
kV
6)
I
SQ
I
W
I
W
T
j
T
stg
R
th SA
R
th SP
V
ESD
–3
–5
– 10
– 40
– 50
Output low
1 ms, 50 ms
interval
5)
10
µs,
500
µs
interval
5)
–2
2
V
Burst
300
V
7)
T
j15
125
°C
8)
Loading may lead to degradation and thus to a shift of the switching threshold at W.
Unfrequent loading leads to a deviation of approx. 20 mV.
6)
Related to GND; the GND pins are connected with the chip carrier via the leadframe.
7)
If it can be prooved with samples.
8)
During normal operation, the failure rate is
≤
100 fit acc. to SN 29500 at a junction
temperature of 75
°C.
Semiconductor Group
7
INFINEON [ INFINEON TECHNOLOGIES AG ]
