Final data
9 Typ. gate charge
V
GS
=
f
(Q
Gate
)
parameter:
I
D
= 4.5 A pulsed
16
V
SPD04N60C3
SPD04N60C3
SPU04N60C3
10 Forward characteristics of body diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 10 µs
10
2
SPD04N60C3
A
12
V
GS
0.8
V
DS max
8
6
I
F
10
0
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
24
nC
10
-1
0
10
0.2
V
DS max
10
1
4
2
0
0
4
8
12
16
20
30
0.4
0.8
1.2
1.6
2
2.4
V
3
Q
Gate
V
SD
11 Typ. drain current slope
di/dt
= f(R
G
), inductive load,
T
j
= 125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=4.5A
2400
12 Typ. switching time
t
=
f
(R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=4.5 A
500
ns
A/µs
400
350
300
250
200
800
di/dt(on)
di/dt
1600
1200
t
td(off)
tf
td(on)
tr
150
100
50
0
0
400
di/dt(off)
0
0
20
40
60
80 100 120 140 160
Ω
200
R
G
20
40
60
80
100 120 140 160
Ω
190
R
G
Page 7
2003-10-02
INFINEON [ INFINEON TECHNOLOGIES AG ]
