SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
High peak current capability
•
Improved transconductance
P-TO220-3-31
1
2
3
V
DS
@
T
jmax
R
DS(on)
I
D
P-TO262-3-1
P-TO263-3-2
650
0.6
7.3
V
Ω
A
P-TO220-3-31
P-TO220-3-1
2
1
P-TO220-3-1
23
•
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP07N60C3
SPB07N60C3
SPI07N60C3
SPA07N60C3
Maximum Ratings
Parameter
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4400
Q67040-S4394
Q67040-S4424
Marking
07N60C3
07N60C3
07N60C3
07N60C3
P-TO220-3-31 Q67040-S4409
Symbol
I
D
Value
SPP_B_I
SPA
Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
A
7.3
4.6
7.3
1)
4.6
1)
21.9
230
0.5
7.3
±20
±
30
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=5.5A,
V
DD
=50V
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
21.9
230
0.5
7.3
±20
±
30
A
mJ
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=7.3A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage static
A
V
W
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
83
32
Operating and storage temperature
T
j ,
T
stg
-55...+150
°C
Rev. 2.1
Page 1
2004-04-07
INFINEON [ INFINEON TECHNOLOGIES AG ]
