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N28F010-120 参数 Datasheet PDF下载

N28F010-120图片预览
型号: N28F010-120
PDF下载: 下载PDF文件 查看货源
内容描述: 28F010 1024K ( 128K ×8 )的CMOS FLASH MEMORY [28F010 1024K (128K X 8) CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 33 页 / 894 K
品牌: INTEL [ INTEL CORPORATION ]
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28F010
E
290207-1
Figure 1. 28F010 Block Diagram
Table 1. Pin Description
Symbol
A
0
–A
16
DQ
0
–DQ
7
Type
INPUT
INPUT/OUTPUT
Name and Function
ADDRESS INPUTS
for memory addresses. Addresses are internally
latched during a write cycle.
DATA INPUT/OUTPUT:
Inputs data during memory write cycles; outputs
data during memory read cycles. The data pins are active high and float to
tri-state
off
when the chip is deselected or the outputs are disabled. Data is
internally latched during a write cycle
CHIP ENABLE:
Activates the device's control logic, input buffers, decoders
and sense amplifiers. CE# is active low; CE# high deselects the memory
device and reduces power consumption to standby levels.
OUTPUT ENABLE:
Gates the devices output through the data buffers
during a read cycle. OE# is active low.
WRITE ENABLE:
Controls writes to the control register and the array. Write
enable is active low. Addresses are latched on the falling edge and data is
latched on the rising edge of the WE# pulse.
Note:
With V
PP
6.5 V, memory contents cannot be altered.
6
CE#
INPUT
OE#
WE#
INPUT
INPUT