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TE28F008S5-100 参数 Datasheet PDF下载

TE28F008S5-100图片预览
型号: TE28F008S5-100
PDF下载: 下载PDF文件 查看货源
内容描述: 字节宽的SMART 5 FlashFile Memory系列4 ,8和16 MBIT [BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 37 页 / 505 K
品牌: INTEL [ INTEL CORPORATION ]
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2.0
BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY
PRINCIPLES OF OPERATION
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The byte-wide Smart 5 FlashFile memories include
an on-chip WSM to manage block erase, program,
and lock-bit configuration functions. It allows for:
100% TTL-level control inputs, fixed power supplies
during block erasure, program, and lock-bit
configuration, and minimal processor overhead with
RAM-like interface timings.
After initial device power-up or return from deep
power-down mode (see Bus Operations), the
device defaults to read array mode. Manipulation of
external memory control pins allow array read,
standby, and output disable operations.
Status register and identifier codes can be
accessed through the CUI independent of the V
PP
voltage. High voltage on V
PP
enables successful
block erasure, program, and lock-bit configuration.
All functions associated with altering memory
contents—block
erase,
program,
lock-bit
configuration, status, and identifier codes—are
accessed via the CUI and verified through the
status register.
Commands are written using standard micro-
processor write timings. The CUI contents serve as
input to the WSM that controls block erase,
program, and lock-bit configuration operations. The
internal algorithms are regulated by the WSM,
including pulse repetition, internal verification, and
margining of data. Addresses and data are
internally latched during write cycles. Writing the
appropriate command outputs array data, accesses
the identifier codes, or outputs status register data.
Interface software that initiates and polls progress
of block erase, program, and lock-bit configuration
can be stored in any block. This code is copied to
and executed from system RAM during flash
memory updates. After successful completion,
reads are again possible via the Read Array
command. Block erase suspend allows system
software to suspend a block erase to read data
from or program data to any other block. Program
suspend allows system software to suspend a
program to read data from any other flash memory
array location.
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16-Mbit
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64-Kbyte Block
8-Mbit
64-Kbyte Block
64-Kbyte Block
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64-Kbyte Block
64-Kbyte Block
4-Mbit
Figure 4. Memory Map
PRODUCT PREVIEW
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