E
1.0
SMART 3 ADVANCED BOOT BLOCK
INTRODUCTION
1.1
Smart 3 Advanced Boot Block
Flash Memory Enhancements
This datasheet contains the specifications for the
Advanced Boot Block flash memory family, which is
optimized for low power, portable systems. This
family of products features 1.65 V–2.5 V or 2.7 V–
3.6 V I/Os and a low V
CC
/V
PP
operating range of
2.7 V–3.6 V for read, program, and erase
operations. In addition this family is capable of fast
programming at 12 V. Throughout this document,
the term “2.7 V” refers to the full voltage range
2.7 V–3.6 V (except where noted otherwise) and
“V
PP
= 12 V” refers to 12 V ±5%. Section 1.0 and
2.0 provide an overview of the flash memory family
including applications, pinouts and pin descriptions.
Section 3.0 describes the memory organization and
operation for these products. Sections 4.0 and 5.0
contain the operating specifications. Finally,
Sections 6.0 and 7.0 provide ordering and other
reference information.
The Smart 3 Advanced Boot Block flash memory
features
•
•
•
Enhanced blocking for easy segmentation of
code and data or additional design flexibility
Program Suspend to Read command
V
CCQ
input of 1.65 V–2.5 V on all I/Os. See
Figures 1 through 4 for pinout diagrams and
V
CCQ
location
Maximum program and erase time specification
for improved data storage.
•
Table 1. Smart 3 Advanced Boot Block Feature Summary
Feature
V
CC
Read Voltage
V
CCQ
I/O Voltage
V
PP
Program/Erase Voltage
Bus Width
Speed
Memory Arrangement
28F008B3, 28F016B3,
28F032B3
(1)
28F400B3
(2),
28F800B3,
28F160B3, 28F320B3
Reference
Section 4.2, 4.4
Section 4.2, 4.4
Section 4.2, 4.4
Table 3
Section 4.5
Section 2.2
2.7 V– 3.6 V
1.65 V–2.5 V or 2.7 V– 3.6 V
2.7 V– 3.6 V or 11.4 V– 12.6 V
8-bit
16 bit
80 ns, 90 ns, 100 ns, 110 ns
1024 Kbit x 8 (8 Mbit),
2048 Kbit x 8 (16 Mbit),
4096 Kbit x 8 (32 Mbit)
256 Kbit x 16 (4 Mbit),
512 Kbit x 16 (8 Mbit),
1024 Kbit x 16 (16 Mbit)
2048 Kbit x 16 (32 Mbit)
Blocking (top or bottom)
Eight 8-Kbyte parameter blocks
and
Seven 64-Kbyte blocks (4-Mbit) or
Fifteen 64-Kbyte blocks (8-Mbit) or
Thirty-one 64-Kbyte main blocks (16-Mbit)
Sixty-three 64-Kbyte main blocks (32-Mbit)
WP# locks/unlocks parameter blocks
All other blocks protected using V
PP
Extended: –40
°C
to +85
°C
100,000 cycles
40-lead TSOP
(1)
, 48-Ball
µBGA*
CSP
(2)
48-Lead TSOP, 48-Ball
µBGA
CSP
(2)
Section 2.2
Appendix D
Locking
Operating Temperature
Program/Erase Cycling
Packages
Section 3.3
Table 8
Section 4.2, 4.4
Section 4.2, 4.4
Figure 3, Figure 4
NOTES:
1.
4-Mbit and 32-Mbit density not available in 40-lead TSOP.
2.
4-Mbit density not available in
µBGA*
CSP.
PRELIMINARY
5
INTEL [ INTEL CORPORATION ]
