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TE28F800B3T120 参数 Datasheet PDF下载

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型号: TE28F800B3T120
PDF下载: 下载PDF文件 查看货源
内容描述: 智能3高级启动块字宽 [SMART 3 ADVANCED BOOT BLOCK WORD-WIDE]
分类和应用:
文件页数/大小: 49 页 / 426 K
品牌: INTEL [ INTEL ]
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E
SMART 3 ADVANCED BOOT BLOCK–WORD-WIDE  
convenient upgrade from and/or compatibility to  
previous 4-Mbit and 8-Mbit Boot Block products.  
1.0 INTRODUCTION  
The Smart 3 product functions are similar to lower  
density products in both command sets and  
operation, providing similar pinouts to ease density  
upgrades.  
This  
preliminary  
datasheet  
contains  
the  
specifications for the Advanced Boot Block flash  
memory family, which is optimized for low power,  
portable systems. This family of products features  
1.8V–2.2V or 2.7V–3.6V I/Os and a low VCC/VPP  
operating range of 2.7V–3.6V for read and  
program/erase operations. In addition this family is  
capable of fast programming at 12V. Throughout  
this document, the term “2.7V” refers to the full  
voltage range 2.7V–3.6V (except where noted  
otherwise) and “VPP = 12V” refers to 12V ±5%.  
Section 1 and 2 provides an overview of the flash  
memory family including applications, pinouts and  
pin descriptions. Section 3 describes the memory  
organization and operation for these products.  
The Smart 3 Advanced Boot Block flash memory  
features  
Enhanced blocking for easy segmentation of  
code and data or additional design flexibility  
Program Suspend command which permits  
program suspend to read  
WP# pin to lock and unlock the upper two (or  
lower two, depending on location) 4-Kword  
blocks  
Finally, Sections 4, 5,  
operating specifications.  
6 and 7 contain the  
VCCQ input for 1.8V–2.2V on all I/Os. See  
Figure 1-4 for pinout diagrams and VCCQ  
location  
1.1  
Smart 3 Advanced Boot Block  
Flash Memory Enhancements  
Maximum program time specification for  
improved data storage.  
The new 4-Mbit, 8-Mbit, and 16-Mbit Smart 3  
Advanced Boot Block flash memory provides a  
Table 1. Smart 3 Advanced Boot Block Feature Summary  
Feature  
VCC Read Voltage  
VCCQ I/O Voltage  
28F160B3  
2.7V– 3.6V  
Reference  
Table 9, Table 12  
Table 9, Table 12  
Table 9, Table 12  
Table 2  
1.8V–2.2V or 2.7V– 3.6V  
VPP Program/Erase Voltage  
Bus Width  
2.7V– 3.6V or 11.4V– 12.6V  
16 bit  
Speed  
120 ns  
Table 15  
Memory Arrangement  
256-Kbit x 16 (4-Mbit), 512-Kbit x 16 (8-Mbit),  
1024-Kbit x 16 (16-Mbit)  
Blocking (top or bottom)  
Eight 4-Kword parameter blocks (4/8/16) &  
Seven 32-Kword blocks (4-Mbit)  
Section 2.2  
Figures 5 and 6  
Fifteen 32-Kword blocks (8-Mbit)  
Thirty-one 32-Kword main blocks (16-Mbit)  
Locking  
WP# locks/unlocks parameter blocks  
All other blocks protected using VPP switch  
Section 3.3  
Table 8  
Operating Temperature  
Program/Erase Cycling  
Packages  
Extended: –40°C to +85°C  
10,000 cycles  
Table 9, Table 12  
Table 9, Table 12  
48-Lead TSOP, 48-Ball µBGA* CSP  
Figures 1, 2, 3,  
and 4  
5
PRELIMINARY