IRF1010EPbF
6000
5000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
20
I
D
= 50A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance(pF)
16
4000
Ciss
3000
12
Coss
2000
8
1000
Crss
4
0
1
10
100
VDS, Drain-to-Source Voltage (V)
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
20
40
60
80
100
120
140
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T
J
= 175
°
C
ID, Drain-to-Source Current (A)
100
100µsec
10
1
T
J
= 25
°
C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
0.1
0.0
V
GS
= 0 V
0.6
1.2
1.8
2.4
10msec
100
1000
1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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