IRF1404Z/S/LPbF
8000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 75A
VDS= 32V
VDS= 20V
16
6000
C, Capacitance (pF)
Ciss
4000
12
8
2000
Coss
Crss
4
0
1
10
100
0
0
40
80
120
160
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
ID, Drain-to-Source Current (A)
1000
10.0
T J = 25°C
1.0
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
1msec
0.1
0.2
0.6
1.0
VGS = 0V
1.4
1.8
1
10msec
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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