IRF1404Z/S/LPbF
600
EAS, Single Pulse Avalanche Energy (mJ)
15V
TOP
500
VDS
L
DRIVER
BOTTOM
I
D
31A
53A
75A
400
RG
20V
V
GS
D.U.T
IAS
tp
+
V
- DD
A
300
0.01
Ω
200
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
tp
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Q
G
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
10 V
Q
GS
V
G
Q
GD
VGS(th) Gate threshold Voltage (V)
4.0
ID = 250µA
3.0
Charge
Fig 13a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
2.0
50KΩ
12V
.2µF
.3µF
D.U.T.
V
GS
3mA
+
V
-
DS
1.0
-75 -50 -25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
I
G
I
D
Current Sampling Resistors
Fig 13b.
Gate Charge Test Circuit
Fig 14.
Threshold Voltage Vs. Temperature
6
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