IRF7104
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.015 ––– V/°C Reference to 25°C, I
D
= -1mA
0.19 0.25
V
GS
= -10V, I
D
= -1.0A
Ω
0.30 0.40
V
GS
= -4.5V, I
D
= -0.50A
––– -3.0
V
V
DS
= V
GS
, I
D
= -250µA
2.5 –––
S
V
DS
= -15V, I
D
= -2.3A
––– -2.0
V
DS
= -16V, V
GS
= 0V
µA
––– -25
V
DS
= -16V, V
GS
= 0V, T
J
= 55 °C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
9.3 25
I
D
= -2.3A
1.6 –––
nC V
DS
= -10V
3.0 –––
V
GS
= -10V
12
40
V
DD
= -10V
16
40
I
D
= -1.0A
ns
42
90
R
G
= 6.0Ω
30
50
R
D
= 10Ω
D
4.0
6.0
290
210
67
–––
nH
–––
–––
–––
–––
pF
Between lead,6mm(0.25in.)
from package and center
of die contact
V
GS
= 0V
V
DS
= -15V
ƒ = 1.0MHz
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -2.0
showing the
A
G
integral reverse
––– ––– -9.2
p-n junction diode.
S
––– ––– -1.2
V
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
––– 69 100
ns
T
J
= 25°C, I
F
= -1.25A
––– 90 140
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
-2.3A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Surface mounted on FR-4 board, t
≤
10sec.
IRF [ INTERNATIONAL RECTIFIER ]
