IRF7910
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
12
–––
–––
–––
0.6
–––
–––
–––
–––
Typ.
–––
0.01
11.5
20
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
15
V
GS
= 4.5V, I
D
= 8.0A
mΩ
50
V
GS
= 2.8V, I
D
= 5.0A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
100
V
DS
= 9.6V, V
GS
= 0V
µA
250
V
DS
= 9.6V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 12V
nA
-200
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
18
––– –––
S
V
DS
= 6.0V, I
D
= 8.0A
–––
17
26
I
D
= 8.0A
–––
4.4 –––
nC
V
DS
= 6.0V
–––
5.2 –––
V
GS
= 4.5V
–––
16 –––
V
GS
= 0V, V
DS
= 10V
–––
9.4 –––
V
DD
= 6.0V
–––
22 –––
I
D
= 8.0A
ns
–––
16 –––
R
G
= 1.8Ω
–––
6.3 –––
V
GS
= 4.5V
––– 1730 –––
V
GS
= 0V
––– 1340 –––
V
DS
= 6.0V
––– 330 –––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
100
8.0
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.85
0.70
50
60
51
60
1.8
A
79
1.3
–––
75
90
77
90
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 125°C, I
S
= 8.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.0A, V
R
=12V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 8.0A, V
R
=12V
di/dt = 100A/µs
2
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