IRF7910
10000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12
ID= 8.0A
VGS , Gate-to-Source Voltage (V)
10
8
6
4
2
0
VDS= 9.6V
VDS= 6.0V
C, Capacitance (pF)
1000
Ciss
Coss
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
100
1
10
100
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
Q G Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.0
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
10msec
1
100
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com