IRF9540N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-100 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.117
-2.0 ––– -4.0
Ω
V
S
VGS = -10V, ID = -11A
VDS = VGS, ID = -250µA
VDS = -50V, ID = -11A
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
5.3
––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 97
––– ––– 15
––– ––– 51
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -11A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -80V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
15 –––
67 –––
51 –––
51 –––
VDD = -50V
ID = -11A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.1Ω
RD = 4.2Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
7.5
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 1300 –––
––– 400 –––
––– 240 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-23
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-76
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -1.6
––– 150 220
V
TJ = 25°C, IS = -11A, VGS = 0V
ns
TJ = 25°C, IF = -11A
Qrr
ton
––– 830 1200 nC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 175°C
Starting TJ = 25°C, L = 7.1mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -11A. (See Figure 12)
INFINEON [ Infineon ]
