IRF9540N
3000
20
16
12
8
V
C
C
C
= 0V ,
f = 1M Hz
I
= -11A
G S
iss
D
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
V
V
V
= -80V
= -50V
= -20V
DS
DS
DS
rss
oss
2500
2000
1500
1000
500
gd
C
iss
C
C
oss
rss
4
FO R TEST CIRCUIT
SEE FIGURE 13
0
0
A
A
1
10
100
0
20
40
60 80
100
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPE RATION IN THIS AREA LIM ITE D
BY R
DS(on)
T
= 175°C
J
T
= 25°C
J
10 0µs
1m s
T
T
= 25°C
= 175°C
C
J
10m s
V
= 0V
G S
1.4
Single Pulse
0.1
A
1
A
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1
10
100
1000
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
INFINEON [ Infineon ]
