IRFP064N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.008
Ω
V
S
VGS = 10V, ID = 59A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 59Aꢀ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
42
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 170
––– ––– 32
––– ––– 74
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 59A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
14 –––
VDD = 28V
––– 100 –––
ID = 59A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
–––
–––
43 –––
70 –––
RG = 2.5Ω
RD = 0.39Ω, See Fig. 10ꢀ
Between lead,
6mm (0.25in.)
from package
D
5.0
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
13
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 4000 –––
––– 1300 –––
––– 480 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
110
––– –––
––– –––
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
390
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.3
––– 110 170
––– 450 680
V
TJ = 25°C, IS = 59A, VGS = 0V
ns
TJ = 25°C, IF = 59A
Qrr
nC di/dt = 100A/µs ꢀ
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 190µH
RG = 25Ω, IAS = 59A. (See Figure 12)
ꢀ Uses IRF3205 data and test conditions
ISD ≤ 59A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Caculated continuous current based on maximum allowable
junction temperature; for recommended current-handling of the
package refer to Design Tip # 93-4
INFINEON [ Infineon ]
