IRL3103
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Min.
30
–––
–––
–––
1.0
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
12
V
GS
= 10V, I
D
= 34A
mΩ
16
V
GS
= 4.5V, I
D
= 28A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 34A
25
V
DS
= 30V, V
GS
= 0V
µA
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
33
I
D
= 34A
5.9
nC
V
DS
= 24V
17
V
GS
= 4.5V, See Fig. 6 and 13
–––
V
DD
= 15V
–––
I
D
= 34A
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
1650 –––
V
GS
= 0V
650 –––
V
DS
= 25V
110 –––
pF
ƒ = 1.0MHz, See Fig. 5
1320
130 mJ I
AS
= 34A, L = 0.22mH
Typ.
–––
0.028
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.9
120
14
9.1
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
64
––– –––
showing the
A
G
integral reverse
––– ––– 220
S
p-n junction diode.
––– ––– 1.2
V
T
J
= 25°C, I
S
= 34A, V
GS
= 0V
––– 57
86
ns
T
J
= 25°C, I
F
= 34A
––– 110 170
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Starting T
J
= 25°C, L = 220µH
R
G
= 25Ω, I
AS
= 34A, V
GS
=10V (See Figure 12)
I
SD
≤
34A, di/dt
≤
120A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
2
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