IRLR/U024NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
––– ––– 0.065
––– ––– 0.080
––– ––– 0.110
VGS = 10V, ID = 10A
VGS = 5.0V, ID = 10A
VGS = 4.0V, ID = 9.0A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 11A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 16V
RDS(on)
StaticDrain-to-SourceOn-Resistance
Ω
VGS(th)
gfs
GateThresholdVoltage
1.0
8.3
––– 2.0
––– –––
V
S
ForwardTransconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 15
––– ––– 3.7
––– ––– 8.5
IDSS
IGSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
VGS = -16V
Qg
ID = 11A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 5.0V, See Fig. 6 and 13
–––
–––
–––
–––
7.1 –––
74 –––
20 –––
29 –––
VDD = 28V
ID = 11A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 12Ω, VGS = 5.0V
RD = 2.4Ω, See Fig. 10
Betweenlead,
D
S
LD
LS
InternalDrainInductance
InternalSourceInductance
4.5
nH
6mm(0.25in.)
G
frompackage
––– 7.5 –––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
InputCapacitance
––– 480 –––
––– 130 –––
OutputCapacitance
pF
VDS = 25V
ReverseTransferCapacitance
–––
61 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
––– –––
––– –––
17
72
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
DiodeForwardVoltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 60 90
––– 130 200
V
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 25°C, IF = 11A
ns
nC
Qrr
ton
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
VDD = 25V, starting TJ = 25°C, L = 790µH
RG = 25Ω, IAS = 11A. (See Figure 12)
ꢀ This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Uses IRLZ24N data and test conditions.
2
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