2SC5619
FOR HIGH FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
V CE =5V /IC=20m A
F requency
( MH z)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
Ma g
0.367
0.355
0.355
0.352
0.348
0.343
0.349
0.354
0.358
0.358
0.359
0.366
0.370
0.376
0.381
0.384
S11
A ng ( deg )
-154.0
-163.0
-171.0
-178.1
176.8
171.7
167.0
162.8
159.1
154.8
150.9
147.6
144.7
140.7
138.1
134.8
1.0
0.5
2.0
S21
Ma g
5.781
4.888
4.241
3.734
3.348
3.037
2.785
2.583
2.415
2.265
2.132
2.020
1.910
1.832
1.750
1.678
A ng ( deg )
86.8
82.1
78.2
74.0
70.3
66.8
63.7
60.7
57.3
54.2
51.7
48.8
46.5
43.6
41.4
38.7
Ma g
0.078
0.090
0.102
0.113
0.126
0.139
0.151
0.164
0.178
0.190
0.203
0.217
0.229
0.243
0.255
0.268
S12
A ng ( deg )
62.1
63.1
63.9
64.4
64.8
64.4
64.3
64.2
63.7
63.0
62.2
61.4
60.6
59.6
58.8
57.8
Ma g
0.357
0.349
0.337
0.321
0.314
0.311
0.298
0.296
0.299
0.294
0.294
0.289
0.284
0.281
0.280
0.277
90°
S22
A ng ( deg )
-35.8
-35.5
-35.8
-36.1
-35.9
-38.2
-38.4
-40.1
-42.2
-44.0
-46.5
-48.7
-51.4
-53.8
-56.6
-59.2
S11
Smith Chart
S21
Polar Chart
150°
120°
8
60°
6
f=500MHz
4
30°
0.2
f=2GHz
5.0
2
0.0
0.2
0.5
1.0
±180°
0
-6
-4
-2
-2
0
f=2GHz
2
4
6
0°
f=500MHz
-0.2
-5.0
-8
8
-150°
-4
-30°
-0.5
-1.0
-2.0
-120°
-6
-90°
-60°
-8
60°
S12
Polar Chart
150°
0.3
9 0 °
120°
0.2
f=2GHz
30°
S22
Smith Chart
1.0
0.5
2.0
0.1
0.2
f=500MHz
± 180°
-0.3
-0.2
-0.1
-0.1
-150°
-30°
-0.2
-120°
-0.3
-90°
-60°
-0.5
-1.0
-2.0
0
0
0.1
0.2
0.3
0.0
0.2
0.5
1.0
f=2GHz
-0.2
f=500MHz
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
