〈Transistor〉
2SC5807
For strobe,DC/DC convertor Application
Silicon NPN Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V
(BR)CBO
V
(BR)EBO
V
(BR)CEO
I
CBO
I
EBO
�½�
ＦＥ
V
CE(sat)
f
T
Cob
PARAMETER
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
TESTCONDITIONS
I
C
=50μA，I
E
=0mA
I
E
=50μA，I
C
=0mA
I
C
=1mA，R
BE
=∞
V
CB
=40V，I
E
=0mA
V
EB
=5V，I
C
=0mA
V
CE
=2V，I
C
=0.5A
I
C
=4A，I
B
=100mA
V
CE
=6V，I
E
=-50mA
V
CB
=20V，I
E
=0mA，f=1MHz
Marking
�½�
ＦＥ
Ｑ
120 to 270
120
0.25
150
30
Ｒ
180 to 390
LIMITS
MIN
50
6
15
0.5
0.5
390
1.0
TYP
MAX
UNIT
V
V
V
μA
μA
-
V
MHz
pF
* Measured using pulse current.
* It shows �½�
ＦＥ
classification in right table.
TYPICAL CHARACTERISTICS
COMMON EMITTER TRANSFER
10
VCE=2V
COMMON EMITTER OUTPUT
5
20mA
Ta=25℃
15mA
25mA
10mA
COLLECTER CURRENT Ｉ
Ｃ
（Ａ）
1
Ta=100℃
COLLECTER CURRENT Ｉ
Ｃ
（Ａ）
4
3
30mA
0.1
25℃
-25℃
2
35mA
5mA
0.01
1
40∼50mA
Pc=2W
IB=0mA
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
BASE TO EMITTER VOLTAGE Ｖ
ＢＥ
（Ｖ）
1.6
0
0
0.4
0.8
1.2
1.6
COLLECTER TO EMITTER VOLTAGE Ｖ
ＣＥ
（Ｖ）
2
DC FORWARD CURRENT GAIN
VS. COLLECTER CURRENT(Ⅰ)
10,000
DC FORWARD CURRENT GAIN �½�
ＦＥ
10,000
DC FORWARD CURRENT GAIN
VS. COLLECTER CURRENT(Ⅱ)
Ta=25℃
VCE=1V
1,000
VCE=5V
DC FORWARD CURRENT GAIN �½�
ＦＥ
1,000
Ta=100℃
2V
100
1V
25℃
100
-25℃
10
0.001
0.01
0.1
1
COLLECTER CURRENT Ｉ
Ｃ
（Ａ）
10
10
0.001
0.01
0.1
1
COLLECTER CURRENT Ｉ
Ｃ
（Ａ）
10
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
