〈Transistor〉
2SC5807
For strobe,DC/DC convertor Application
Silicon NPN Epitaxial Type
DC FORWARD CURRENT GAIN
VS. COLLECTER CURRENT(Ⅲ)
10,000
VCE=2V
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT(Ⅰ)
1
Ta=25℃
DC FORWARD CURRENT GAIN �½�
FE
COLLECTER TO EMITTER
SATURATION VOLTAGE V
CE(�½��½��½�)
(V)
1,000
Ta=100℃
0.1
IC/IB=50
40
25℃
100
-25℃
0.01
30
10
10
0.001
0.01
0.1
1
COLLECTER CURRENT I
C
(A)
10
0.001
0.001
0.01
0.1
1
COLLECTER CURRENT I
C
(A)
10
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT(Ⅱ)
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT(Ⅲ)
1
IC/IB=10
1
IC/IB=30
COLLECTER TO EMITTER
SATURATION VOLTAGE V
CE(�½��½��½�)
(V)
0.1
COLLECTER TO EMITTER
SATURATION VOLTAGE V
CE(�½��½��½�)
(V)
0.1
Ta=100℃
0.01
Ta=100℃
0.01
25℃
-25℃
25℃
-25℃
0.001
0.001
0.01
0.1
1
COLLECTER CURRENT I
C
(A)
10
0.001
0.001
0.01
0.1
1
COLLECTER CURRENT I
C
(A)
10
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT(Ⅳ)
COLLECTER TO EMITTER SATURATION
VOLTAGE VS. COLLECTER CURRENT(Ⅴ)
1
IC/IB=40
1
IC/IB=50
COLLECTER TO EMITTER
SATURATION VOLTAGE V
CE(�½��½��½�)
(V)
0.1
Ta=100℃
COLLECTER TO EMITTER
SATURATION VOLTAGE V
CE(�½��½��½�)
(V)
0.1
Ta=100℃
0.01
25℃
-25℃
0.01
25℃
-25℃
0.001
0.001
0.01
0.1
1
COLLECTER CURRENT I
C
(A)
10
0.001
0.001
0.01
0.1
1
COLLECTER CURRENT I
C
(A)
10
ISAHAYA ELECTRONICS CORPORATION