PRELIMINARY
RT3NDDM
Composite Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT3NDDM is a composite transistor built with two
RT1N237 chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
①
0.65
②
③
⑥
⑤
④
0.2
Unit
：mm
FEATURE
Silicon NPN epitaxial type
Built in bias resistor (R1=2.2kΩ，R2=47kΩ)
Each transistor elements are independent.
Mini package for easy mounting
2.0
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
0.65
0.13
⑤
R1
RTr1
RTr2
R2
①
②
R1
③
0∼0.1
⑥
④
R2
TERMINAL
CONNECTOR
①
：EMITTER1
②
：BASE1
③
：COLLECTOR2
④
：EMITTER2
⑤
：BASE2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25
℃)
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
（Total,
Ta=25℃
）
Junction temperature
Storage temperature
RATING
50
10
50
100
200
150
＋150
-55∼＋150
UNIT
V
V
V
mA
mA
mW
℃
℃
0.9
0.65
MARKING
⑥ ⑤ ④
.
N DD
① ② ③
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
