PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
Symbol
V
(BR)CEO
I
CBO
h
FE
V
CE(sat)
V
I(ON)
V
I(OFF)
R
1
R
2
/R
1
f
T
Parameter
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
Test conditions
I
C
=100μA,R
BE
=∞
V
CB
=50V,I
E
=0
V
CE
=5V,I
C
=10mA
I
C
=10mA,I
B
=0.5mA
V
CE
=0.2V,I
C
=5mA
V
CE
=5V,I
C
=100μA
-
-
V
CE
=6V,I
E
=-10mA
RT3NDDM
Composite Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
Limits
Min
50
-
80
-
-
0.5
1.5
17
-
Typ
-
-
-
0.1
0.7
0.6
2.2
22
200
Max
-
0.1
-
0.3
1.1
-
2.9
26
-
Unit
V
μA
-
V
V
V
kΩ
-
MH
Z
TYPICAL CHARACTERISTICS ( Tr1
，Tr2
)
INPUT ON VOLTAGE
VS. COLLECTOR CURRENT
VCE=0.2V
INPUT ON VOLTAGE VI(ON)(V)
DC FORWARD CURRENT GAIN
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
VCE=5V
10
1000
1
100
0.1
1
10
COLLECTOR CURRENT IC(mA)
COLLECTOR CURRENT
VS. INPUT OFF VOLTAGE
VCE=5V
COLLECTOR CURRENT IC(mA)
100
10
1
10
COLLECTOR CURRENT IC(mA)
100
1000
100
10
0.0
0.4
0.8
1.2
1.6
2.0
INPUT OFF VOLTAGE VI(OFF)(V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
