RT3P66U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
V
(BR)CEO
I
CBO
h
FE
V
CE(sat)
R
1
f
T
Parameter
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input resistor
Gain band width product
(Tr1,Tr2 common)
Test conditions
Limits
Min
-50
-0.1
100
-0.1
3.3
4.7
150
-0.3
6.1
Typ
Max
Unit
V
μA
-
V
kΩ
MH
Z
I
C
=-100μA，R
BE
=∞
V
CB
=-50V，I
E
=0
V
CE
=-5V，I C=-1mA
I
C
=-10mA，I
B
=-0.5mA
V
CE
=-6V，I
E
=10mA
TYPICAL CHARACTERISTICS
Input on voltage-Collector CUrrent
-10
(Tr1,Tr2 common)
DC forward current gain -Collector CUrrent
1000
DC forward current gain hFE
Input on voltage VI(ON) (V)
V
CE
=-0.2V
V
CE
=-5V
-1
100
-0.1
-0.1
-1
-10
-100
10
-0.1
-1
-10
-100
Collector CUrrent Ic (mA)
Collector CUrrent Ic(mA)
Collector Current-Input off voltage
-1000
Collector CUrrent Ic (uA)
V
CE
=-5V
-100
-10
-0
-0.2
-0.4 -0.6
-0.8
-1
-1.2
-1.4 -1.6
-1.8
-2
Input off voltage VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA [ ISAHAYA ELECTRONICS CORPORATION ]
