Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(sat)
V
BE(on)
I
CEO
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=10A; I
B
=2A
I
C
=10A ; V
CE
=4V
V
CE
=140V; I
B
=0
V
CE
=140V; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=7V; I
C
=0
I
C
=3A ; V
CE
=4V
I
C
=10A ; V
CE
=4V
I
C
=2.0A ; V
CE
=4V;f
t
=40kHz
20
7.5
80
MIN
140
TYP.
2N3442
MAX
UNIT
V
5.0
5.7
200
5.0
30
5.0
70
V
V
mA
mA
mA
kHz
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
