Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB631
I
C
=-1mA; R
BE
=∞
2SB631K
2SB631
I
C
=-10μA ;I
E
=0
2SB631K
I
E
=-10μA ;I
C
=0
I
C
=-0.5A ;I
B
=-50mA
I
C
=-0.5A ;I
B
=-50mA
V
CB
=-50V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-50mA ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-5V
CONDITIONS
2SB631 2SB631K
MIN
-100
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-120
-100
V
-120
-5
-0.4
-1.2
-1
-1
60
20
V
V
V
μA
μA
V
(BR)CBO
Collector-base
breakdown voltage
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
电半
固
Fall time
DC current gain
DC current gain
导�½�
Transition frequency
Collector output capacitance
I
C
=-50mA ; V
CE
=-10V
Switching times
t
f
t
off
t
stg
HAN
INC
ES
G
f=1MHz ; V
CB
=-10V
ND
ICO
EM
OR
UCT
320
110
30
0.08
MHz
pF
μs
μs
μs
Turn-off time
Storage time
I
C
=-500mA ; V
CE
=-12V
I
B1
=-I
B2
=-50mA
0.10
0.60
h
FE-1
Classifications
D
60-120
E
100-200
F
160-320
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
