INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
2SB673
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 2000(Min)@ I
C
= -
3A
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -100V(Min)
·Low
Collector Saturation Voltage-
: V
CE(sat)
= -1.5V(Max)@ I
C
= -
3A
·Complement
to Type 2SD633
APPLICATIONS
·High
power switching applications.
·Hammer
drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-100
V
V
CEO
Collector-Emitter Voltage
-100
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
I
B
B
Collector Current-Continuous
-7
A
Base Current-DC
Collector Power Dissipation
T
C
=25℃
Junction Temperature
-0.2
A
P
C
40
W
℃
℃
T
j
150
T
stg
Storage Temperature Range
-55~150
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
