INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB673
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC= -50mA, IB= 0
-100
IC= -3A ,IB= -6mA
IC= -7A ,IB= -14mA
IC= -3A ,IB= -6mA
VCB= -100V, IE= 0
VEB= -5V; IC= 0
-1.5
-2.0
-2.5
-100
-4
V
)-1
sat
V
VCE(
)-2
sat
V
VBE(
)
sat
ICBO
μA
mA
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
IC= -3A ; VCE= -3V
IC= -7A ; VCE= -3V
2000
1000
15000
hFE-2
DC Current Gain
Switching times
Turn-on Time
0.8
2.0
2.5
μs
μs
μs
ton
tstg
tf
RL= 15Ω, VCC= -45V
IB1= -IB2= -6mA
Storage Time
Fall Time
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
