INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC4242
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A; I
B
= 0
400
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= 1mA; I
E
= 0
450
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 1mA; I
C
= 0
8
V
V
CE(
sat
)
V
BE(
sat
)
I
CBO
Collector-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.8A
B
0.8
V
Base-Emitter Saturation Voltage
I
C
= 4A; I
B
= 0.8A
B
1.2
V
μA
μA
Collector Cutoff Current
V
CB
= 450V; I
E
= 0
100
I
EBO
Emitter Cutoff Current
V
EB
= 8V; I
C
= 0
100
h
FE
DC Current Gain
I
C
= 4A ; V
CE
= 5V
10
Switching times
μs
μs
μs
t
on
t
stg
t
f
Turn-on Time
I
C
= 5A , I
B1
= -I
B2
=1A
R
L
= 30Ω; V
CC
= 150V
1.0
Storage Time
2.5
Fall Time
0.5
isc Website：www.iscsemi.cn
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
