Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD669 2SD669A
DESCRIPTION
・With
TO-126 package
・Complement
to type 2SB649/649A
・High
breakdown voltage V
CEO:
120/160V
・High
current 1.5A
・Low
saturation voltage,excellent h
FE
linearity
APPLICATIONS
・For
low-frequency power
amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
固电
IN
V
CBO
Collector-base voltage
ES
ANG
CH
2SD669
2SD669A
2SD669
2SD669A
导�½�
半
ON
MIC
E
CONDITIONS
OR
DUT
VALUE
180
V
180
120
UNIT
Open emitter
V
CEO
Collector-emitter voltage
Open base
160
Open collector
5
1.5
3
T
a
=25℃
1
V
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current (DC)
Collector current-peak
V
A
A
P
D
Total power dissipation
T
C
=25℃
20
150
-55~150
W
T
j
T
stg
Junction temperature
Storage temperature
℃
℃
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
