Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SD669
I
C
=10mA; R
BE
=∞
2SD669A
2SD669
I
C
=1m A ;I
E
=0
2SD669A
I
E
=1mA ;I
C
=0
I
C
=0.5A ;I
B
=50mA
I
C
=150mA ; V
CE
=5V
V
CB
=160V; I
E
=0
2SD669
h
FE-1
DC current gain
CONDITIONS
2SD669 2SD669A
MIN
120
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
160
180
V
180
5
1.0
1.5
10
60
320
200
V
V
V
μA
V
(BR)CBO
Collector-base
breakdown voltage
V
(BR)EBO
V
CEsat
V
BE
I
CBO
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
h
FE-2
f
T
C
OB
固电
IN
B
60-120
60-120
DC current gain
Transition frequency
Collector output capacitance
h
FE
Classifications
h
FE-1
2SB649
2SB649A
ES
ANG
CH
C
100-200
100-200
D
160-320
导�½�
半
I
C
=150mA ; V
CE
=5V
2SD669A
I
C
=0.5A ; V
CE
=5V
I
C
=150mA ; V
CE
=5V
f=1MHz ; V
CB
=10V
ON
MIC
E
OR
DUT
60
30
140
14
MHz
pF
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
