Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
voltage
・Fast
switching
APPLICATIONS
・General
purpose switching
・Switch
mode power supplies
・Electronic
ballasts for fluorescent lighting
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUV46 BUV46A
・
Absolute maximum ratings (Tc=25
℃
)
SYMBOL
V
CBO
PARAMETER
固电
IN
导�½�
半
Collector-base voltage
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Collector-emitter voltage
HAG
C
ND
ICO
SEM
NE
CONDITIONS
BUV46
Open emitter
BUV46A
BUV46
Open base
BUV46A
Open collector
OR
UCT
VALUE
850
1000
400
450
7
5
3
UNIT
V
V
V
A
A
W
℃
℃
Emitter-base voltage
Collector current (DC)
Base current
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25℃
70
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
1.76
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
