Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV46 BUV46A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
400
450
TYP.
MAX
UNIT
BUV46
BUV46A
BUV46
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.1A ;IB=0
V
IC=2.5A ;IB=0.5A
Collector-emitter
saturation voltage
VCEsat-1
VCEsat-2
VBEsat
1.5
5.0
1.3
V
V
V
BUV46A IC=2A ;IB=0.4A
BUV46 IC=3.5A ;IB=0.7A
BUV46A IC=3A ;IB=0.6A
BUV46 IC=2.5A; IB=0.5A
BUV46A IC=2A; IB=0.4A
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
V
CE =VCEX; RBE =10 Ω
0.1
1.0
ICER
ICEX
IEBO
Collector cut-off current
Collector cut-off current
Emitter cut-off current
mA
mA
mA
TC=125℃
VCE =VCEX ;VBE = -2.5 V
TC=125℃
0.3
2.0
VEB=7V; IC=0
1.0
Switching times
ton Turn-on time
ts
1.0
3.0
0.8
μs
μs
μs
For BUV46
IC=2.5A;IB1=-IB2=0.5A;VCC=150V
Storage time
Fall time
For BUV46A
IC=2A;IB1=-IB2=0.4A;VCC=150V
tf
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
