Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUY69A BUY69B BUY69C
DESCRIPTION
・With
TO-3 package
・High
voltage capability
APPLICATIONS
・For
horizontal deflection output stage
of CTV receivers and high voltalge,
fast switching and industrial applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
PARAMETER
V
CBO
V
CEO(SUS)
导�½�
半
ND
固电
ICO
SEM
GE
HAN
INC
CONDITIONS
BUY69A
Collector-base voltage
BUY69B
Open emitter
BUY69C
BUY69A
BUY69B
Collector-emitter
sustaining voltage
Open base
BUY69C
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
OR
CT
U
VALUE
1000
800
500
400
325
200
8
10
15
3.0
100
200
-65~200
UNIT
V
V
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.75
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
