Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
BUY69A
V
CEO(SUS)
Collector-emitter
sustaining voltage
BUY69B
BUY69C
BUY69A
V
CBO
Collector-base voltage
BUY69B
BUY69C
V
CEsat
V
BEsat
I
CES
I
EBO
h
FE
f
T
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
I
C
=8A ;I
B
=2.5A
I
C
=8A ;I
B
=2.5A
I
C
=1mA; I
E
=0
I
C
=100mA ; I
B
=0
BUY69A BUY69B BUY69C
CONDITIONS
MIN
400
325
200
1000
800
500
TYP.
MAX
UNIT
V
V
3.3
2.2
V
V
mA
mA
V
CE
=rated V
CES
; V
BE
=0
V
EB
=8V; I
C
=0
Switching times
t
r
t
s
t
f
导�½�
半
ND
固电
ICO
SEM
GE
HAN
INC
I
C
=2.5A ; V
CE
=10V
Transition frequency
I
C
=0.5A ; V
CE
=10V;f=1MHz
Rise time
Storage time
Fall time
I
C
=5A ;I
B1
=-I
B2
=1.0A; V
CC
=250V
OR
CT
U
1.0
15
10
0.3
1.8
1.0
1.0
MHz
μs
μs
μs
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
