Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・High
voltage ,high speed
APPLICATIONS
・Particularly
suited for 115V and 220V
switchmode applications such as switching
regulators,inverters ,motor controls,solenoid/
relay drivers and deflection circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJE13009
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
E
I
EM
I
B
I
BM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Emitter current
Emitter current-Peak
Base current
Base current-Peak
T
a
=25℃
Total power dissipation
T
C
=25℃
Junction temperature
Storage temperature
100
150
-65~150
℃
℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
700
400
9
12
24
18
36
6
12
2
W
UNIT
V
V
V
A
A
A
A
A
A
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.25
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
