Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE13009
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VCEsat-3
VBEsat-1
VBEsat-2
ICEV
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
Collector-emitter sustaining voltage IC=10mA; IB=0
Collector-emitter saturation voltage IC=5A; IB=1A
400
V
1.0
V
V
IC=8A ;IB=1.6A
Collector-emitter saturation voltage
TC=100℃
1.5
2.0
Collector-emitter saturation voltage IC=12A; IB=3A
3.0
1.2
V
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5A; IB=1A
V
IC=8A; IB=1.6A
1.6
1.5
V
TC=100℃
V
CEV=Rated value,
VBE(off)=1.5V dc;TC=100℃
1.0
5.0
mA
mA
IEBO
VEB=9V; IC=0
1.0
40
30
hFE-1
IC=5A ; VCE=5V
8
6
4
hFE-2
DC current gain
IC=8A ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
IE=0; f=0.1MHz ; VCB=10V
MHz
pF
COB
Collector outoput capacitance
180
Switching times resistive load
td
tr
Delay time
Rise time
Storage time
Fall time
0.06
0.45
1.30
0.20
0.1
1.0
3.0
0.7
μs
μs
μs
μs
V
CC=125V ,IC=8A
IB1=-IB2=1.6A
tp=25μs
duty cycle≤1%
ts
tf
2
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