INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector–Emitter
Breakdown Voltage—
: V
(BR)CEO
=-60 V
·DC
Current Gain—
: h
FE
= 750(Min) @ I
C
=-1.5 A
·Complement
to Type MJE800
MJE700
APPLICATIONS
·Designed
for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-60
-60
-5
-4
-0.1
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
3.13
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
