INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
MJE700
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
V(BR)CEO
Collector-Emitter Breakdown Voltage IC=-50mA; IB= 0
-60
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IC=-1.5A; IB= -30mA
IC= -4A; IB=-40mA
IC= -1.5A; VCE= -3V
IC= -4A; VCE= -3V
VCE=-60V; IB= 0
-2.5
-3.0
-2.5
-3.0
-0.1
V
VCE
VCE
VBE
VBE
(sat)-1
(sat)-2
(on)-1
(on)-2
V
V
V
ICEO
mA
mA
mA
VCB=-60V; IE= 0
-0.1
-0.5
ICBO
VCB=-60V; IE= 0;TC= 100℃
IEBO
VEB=-5V; IC= 0
-2.0
hFE-1
DC Current Gain
IC=- 1.5 A ; VCE= -3V
IC= -4A ; VCE= -3V
750
100
hFE-2
DC Current Gain
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
