INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TIP48
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 30mA; I
B
= 0
300
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 1A; I
B
= 0.2A
B
1.0
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= 1A; V
CE
= 10V
1.5
V
I
CES
Collector Cutoff Current
V
CE
= 400V; V
BE
= 0
1.0
mA
I
CEO
Collector Cutoff Current
V
CE
= 200V; I
B
= 0
1.0
mA
I
EBO
Emitter Cutoff Current
V
EB
= 5V; I
C
= 0
1.0
mA
h
FE-1
DC Current Gain
I
C
= 0.3A; V
CE
= 10V
30
150
h
FE-2
DC Current Gain
I
C
= 1A; V
CE
= 10V
10
f
T
Current-Gain—Bandwidth Product
I
C
= 0.1A; V
CE
= 10V
10
MHz
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ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
