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IS41LV16100B-60KI 参数 Datasheet PDF下载

IS41LV16100B-60KI图片预览
型号: IS41LV16100B-60KI
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×16 ( 16兆位)动态RAM与EDO页模式 [1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 22 页 / 143 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS41LV16100B
AC CHARACTERISTICS
(Continued)
(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
Symbol
t
WP
t
WPZ
t
RWL
t
CWL
t
WCS
t
DHR
t
OEH
t
DS
t
DH
t
RWC
t
RWD
t
CWD
t
AWD
t
PC
t
RASP
t
CPA
t
PRWC
t
COH
t
OFF
t
WHZ
t
CLCH
t
CSR
t
CHR
t
ORD
t
REF
t
T
Parameter
Write Command Pulse Width
(17)
WE
Pulse Widths to Disable Outputs
Write Command to
RAS
Lead Time
(17)
Write Command to
CAS
Lead Time
(17, 21)
Write Command Setup Time
(14, 17, 20)
Data-in Hold Time (referenced to
RAS)
OE
Hold Time from
WE
during
READ-MODIFY-WRITE cycle
(18)
Data-In Setup Time
(15, 22)
Data-In Hold Time
(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS
to
WE
Delay Time during
READ-MODIFY-WRITE Cycle
(14)
CAS
to
WE
Delay Time
(14, 20)
Column-Address to
WE
Delay Time
(14)
EDO Page Mode READ or WRITE
Cycle Time
(24)
RAS
Pulse Width in EDO Page Mode
Access Time from
CAS
Precharge
(15)
EDO Page Mode READ-WRITE
Cycle Time
(24)
Data Output Hold after
CAS
LOW
Output Buffer Turn-Off Delay from
CAS
or
RAS
(13,15,19, 29)
Output Disable Delay from
WE
Last
CAS
going LOW to First
CAS
returning HIGH
(23)
CAS
Setup Time (CBR REFRESH)
(30, 20)
CAS
Hold Time (CBR REFRESH)
(30, 21)
OE
Setup Time prior to
RAS
during
HIDDEN REFRESH Cycle
Auto Refresh Period (1,024 Cycles)
Transition Time (Rise or Fall)
(2, 3)
Min.
8
10
13
8
0
39
14
0
8
110
65
26
40
30
50
56
5
3
3
10
5
8
0
3
Max.
100K
30
12
10
16
50
Min.
10
10
15
15
0
40
15
0
15
155
85
40
55
40
60
56
5
3
3
10
5
10
0
3
-60
Max.
100K
35
15
15
16
50
ISSI
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
®
8
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
04/13/05