IS42S32400B
AC ELECTRICAL CHARACTERISTICS
Symbol Parameter
t
CK3
t
CK2
t
AC3
t
AC2
t
CHI
t
CL
t
OH3
t
OH2
t
LZ
t
HZ
t
DS
t
DH
t
AS
t
AH
t
CKS
t
CKH
t
CS
t
CH
t
RC
t
RAS
t
RP
t
RCD
t
RRD
t
DPL
t
DAL
t
MRD
t
DDE
t
XSR
t
T
t
REF
Clock Cycle Time
Access Time From CLK
CLK HIGH Level Width
CLK LOW Level Width
Output Data Hold Time
Output LOW Impedance Time
Output HIGH Impedance Time
Input Data Setup Time
(2)
Input Data Hold Time
(2)
Address Setup Time
(2)
Address Hold Time
(2)
CKE Setup Time
(2)
CKE Hold Time
(2)
Command Setup Time (CS,
RAS, CAS, WE,
DQM)
(2)
Command Hold Time (CS,
RAS, CAS, WE,
DQM)
(2)
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Active Command To Read / Write Command Delay Time
Command Period (ACT [0] to ACT[1])
Input Data To Precharge
Command Delay time
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
Mode Register Program Time
Power Down Exit Setup Time
Self-Refresh Exit Time
Transition Time
Refresh Cycle Time (4096)
CAS
Latency = 3
CAS
Latency = 2
CAS
Latency = 3
CAS
Latency = 2
CAS
Latency = 3
CAS
Latency = 2
(1,2,3)
ISSI
-6
Min.
6
8
—
—
2.5
2.5
2.7
2.7
0
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
60
42
18
18
12
12
30
12
6
70
1
—
Max.
—
—
5.4
6.5
—
—
—
—
—
5.4
—
—
—
—
—
—
—
—
—
100K
—
—
—
—
—
—
—
—
10
64
Min.
7
10
—
—
2.5
2.5
2.7
3
0
2.7
1.5
0.8
1.5
0.8
1.5
0.8
1.5
0.8
67.5
45
20
20
14
14
34
15
7.5
70
1
—
-7
Max.
—
—
5.4
6.5
—
—
—
—
—
5.4
—
—
—
—
—
—
—
—
—
100K
—
—
—
—
—
—
—
—
10
64
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
®
Notes:
1. The power-on sequence must be executed before starting memory operation.
2. Measured with t
T
= 1 ns. If clock rising time is longer than 1ns, (t
R
/2 - 0.5) ns should be added to the parameter.
3. The reference level is 1.4V when measuring input signal timing. Rise and fall times are measured between V
IH
(min.) and V
IL
(max).
16
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
PRELIMINARY INFORMATION Rev. 00G
06/15/06