®
IS61C1024AL, IS64C1024AL
ISSI
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
–0.5 to +7.0
–65 to +150
1.5
Unit
V
VTERM
TSTG
PT
Terminal Voltage with Respect to GND
StorageTemperature
°C
PowerDissipation
W
IOUT
DCOutputCurrent(LOW)
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol
Parameter
Conditions
VIN = 0V
Max.
Unit
pF
CIN
InputCapacitance
OutputCapacitance
5
7
COUT
VOUT = 0V
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
TestConditions
Min.
2.4
Max.
Unit
V
VOH
VOL
VIH
VIL
ILI
OutputHIGHVoltage
VDD = Min., IOH = –4.0 mA
VDD = Min., IOL = 8.0 mA
—
0.4
OutputLOWVoltage
Input HIGH Voltage
Input LOW Voltage(1)
InputLeakage
—
V
2.2
VDD + 0.5
0.8
V
–0.3
V
GND ≤ VIN ≤ VDD
Com.
Ind.
Auto.
–1
–2
–5
1
2
5
µA
ILO
OutputLeakage
GND ≤ VOUT ≤ VDD
OutputsDisabled
Com.
Ind.
Auto.
–1
–2
–5
1
2
5
µA
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
3
01/24/05
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
