IS61C1024
IS61C1024L
ISSI
-12 ns
(3)
Min. Max.
12
10
10
10
0
0
10
7
0
—
2
—
—
—
—
—
—
—
—
—
7
—
-15 ns
Min. Max.
15
12
12
12
0
0
10
8
0
—
2
—
—
—
—
—
—
—
—
—
7
—
-20 ns
Min. Max.
20
15
15
15
0
0
12
10
0
—
2
—
—
—
—
—
—
—
—
—
10
—
-25 ns
Min. Max.
25
20
20
20
0
0
15
12
0
—
2
—
—
—
—
—
—
—
—
—
12
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range, Standard and Low Power)
Symbol
Parameter
Write Cycle Time
Unit
t
WC
t
SCE
1
t
SCE
2
t
AW
t
HA
t
SA
t
PWE
(4)
t
SD
t
HD
CE1
to Write End
CE2 to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
WE
Pulse Width
Data Setup to Write End
Data Hold from Write End
t
HZWE
(5)
WE
LOW to High-Z Output
t
LZWE
(5)
WE
HIGH to Low-Z Output
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE1
LOW, CE2 HIGH and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
3. -12 ns device for IS61C1024 only.
4. Tested with
OE
HIGH.
5. Tested with the load in Figure 2. Transition is measured
±500
mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR028-1K
05/12/99
7
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
