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IS61LV10248-10TI 参数 Datasheet PDF下载

IS61LV10248-10TI图片预览
型号: IS61LV10248-10TI
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×8高速CMOS静态RAM [1M x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 116 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV10248
ISSI
®
AC WAVEFORMS
WRITE CYCLE NO. 2
(1,2)
(WE Controlled:
OE
is HIGH During Write Cycle)
t
WC
ADDRESS
VALID ADDRESS
t
HA
OE
CE
LOW
t
AW
WE
t
PWE1
t
SA
t
HZWE
DATA UNDEFINED
HIGH-Z
t
LZWE
D
OUT
t
SD
D
IN
t
HD
DATA
IN
VALID
CE_WR2.eps
Notes:
1. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE
> V
IH
.
10
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06