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IS61LV10248-10TI 参数 Datasheet PDF下载

IS61LV10248-10TI图片预览
型号: IS61LV10248-10TI
PDF下载: 下载PDF文件 查看货源
内容描述: 1M ×8高速CMOS静态RAM [1M x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 16 页 / 116 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS61LV10248
ISSI
®
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (CE =
OE
= V
IL
)
t
RC
ADDRESS
t
AA
t
OHA
D
OUT
PREVIOUS DATA VALID
t
OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2
(1,3)
(CE and
OE
Controlled)
t
RC
ADDRESS
t
AA
OE
t
OHA
t
DOE
CE
t
HZOE
t
LZOE
t
ACE
t
LZCE
t
HZCE
DATA VALID
CE_RD2.eps
D
OUT
HIGH-Z
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE, CE
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transitions.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/13/06
7