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IS61LV5128AL-10KI 参数 Datasheet PDF下载

IS61LV5128AL-10KI图片预览
型号: IS61LV5128AL-10KI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8高速CMOS静态RAM [512K x 8 HIGH-SPEED CMOS STATIC RAM]
分类和应用:
文件页数/大小: 13 页 / 98 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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®
IS61LV5128AL  
ISSI  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Value  
–0.5 to VDD + 0.5  
–65 to +150  
1.0  
Unit  
V
VTERM  
TSTG  
PT  
Terminal Voltage with Respect to GND  
StorageTemperature  
°C  
W
PowerDissipation  
Notes:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-  
nentdamagetothedevice. Thisisastressratingonlyandfunctionaloperationofthedeviceat  
these or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating conditions for extended  
periodsmayaffectreliability.  
OPERATING RANGE  
VDD  
Range  
AmbientTemperature  
0°C to +70°C  
10ns  
12ns  
Commercial  
Industrial  
3.3V +10%, -5%  
3.3V +10%, -5%  
3.3V +10%  
3.3V +10%  
-40°Cto+85°C  
CAPACITANCE(1,2)  
Symbol  
CIN  
Parameter  
Conditions  
VIN = 0V  
Max.  
Unit  
pF  
InputCapacitance  
6
8
CI/O  
Input/OutputCapacitance  
VOUT = 0V  
pF  
Notes:  
1. Tested initially and after any design or process changes that may affect these parameters.  
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.  
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774  
Rev. C  
3
04/15/05