IS61LV5128AL
ISSI
-10
Min. Max.
10
8
8
0
0
8
10
6
0
—
2
—
—
—
—
—
—
—
—
—
5
—
-12
Min. Max.
12
8
8
0
0
8
12
6
0
—
2
—
—
—
—
—
—
—
—
—
6
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
Symbol
Parameter
Write Cycle Time
CE
to Write End
Address Setup Time
to Write End
Address Hold from Write End
Address Setup Time
WE
Pulse Width
WE
Pulse Width (OE = LOW)
Data Setup to Write End
Data Hold from Write End
WE
LOW to High-Z Output
WE
HIGH to Low-Z Output
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(2)
t
LZWE
(2)
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are
referenced to the rising or falling edge of the signal that terminates the write.
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(CE Controlled,
OE
= HIGH or LOW)
t
WC
ADDRESS
VALID ADDRESS
t
SA
CE
t
SCE
t
HA
WE
t
AW
t
PWE1
t
PWE2
t
HZWE
t
LZWE
HIGH-Z
D
OUT
DATA UNDEFINED
t
SD
D
IN
t
HD
DATA
IN
VALID
CE_WR1.eps
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
04/15/05
7
ISSI [ INTEGRATED SILICON SOLUTION, INC ]
