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IS62WV12816ALL-70T 参数 Datasheet PDF下载

IS62WV12816ALL-70T图片预览
型号: IS62WV12816ALL-70T
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×16低电压超低功耗CMOS静态RAM [128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM]
分类和应用:
文件页数/大小: 17 页 / 110 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS62WV12816ALL,
IS62WV12816BLL
ISSI
V
DD
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
Min.
1.4
2.2
1.4
2.2
–0.2
–0.2
–1
–1
Max.
0.2
0.4
V
DD
+ 0.2
V
DD
+ 0.3
0.4
0.6
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
®
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
V
IN
V
DD
GND
V
OUT
V
DD
, Outputs Disabled
Test Conditions
I
OH
= -0.1 mA
I
OH
= -1 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/08/05