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IS62WV25616BLL-55TI 参数 Datasheet PDF下载

IS62WV25616BLL-55TI图片预览
型号: IS62WV25616BLL-55TI
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×16低电压,超低功耗CMOS静态SRAM [256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 14 页 / 112 K
品牌: ISSI [ INTEGRATED SILICON SOLUTION, INC ]
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IS62WV25616ALL, IS62WV25616BLL
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
10
Unit
pF
pF
ISSI
®
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
IS62WV25616ALL
(Unit)
0.4V to V
DD
-0.2V
5 ns
V
REF
See Figures 1 and 2
IS62WV25616BLL
(Unit)
0.4V to V
DD
-0.3V
5ns
V
REF
See Figures 1 and 2
IS62WV25616ALL
1.65V-2.2V
R1(Ω)
Ω)
R2(Ω)
Ω)
V
REF
V
TM
3070
3150
0.9V
1.8V
IS62WV25616BLL
2.5V - 3.6V
3070
3150
1.5V
2.8V
AC TEST LOADS
R1
VTM
VTM
R1
OUTPUT
30 pF
Including
jig and
scope
R2
OUTPUT
5 pF
Including
jig and
scope
R2
Figure 1
Figure 2
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
05/02/05
5